technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com p-channel j-fet equivalent to mil-prf-19500/296 t4-lds-0003 rev. 1 (063374) page 1 of 1 devices levels 2n2609 mq = jan equivalent absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit gate-source voltage v gss 30 v power dissipation (1) t a = +25c p d 300 mw operating junction & storage temperature range t op , t stg -65 to + 200 c (1) derate linearly 1.71 mw/c for t a > +25c. electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit gate-source breakdown voltage v ds = 0, i g = 1.0 a dc v (br)gss 30 vdc gate reverse current v ds = 0, v gs = 30v dc v ds = 0, v gs = 15v dc i gss 30 22.5 a drain current v gs = 0v dc, v ds = 5.0v dc i dss -2.0 -10.0 ma gate-source cutoff voltage v ds = 5.0v, i d = 1.0 a dc v gs(off) 0.75 6.0 vdc magnitude of small-signal, common-source short-circuit forward transfer admittance v gs = 0, v ds = 5.0v dc, f = 1.0khz |y fs2 | 2,000 6,250 mho small-signal, common-source short-circuit input capacitance v gs = 0, v ds = 5.0v dc, f = 1.0mhz c iss 10 pf common-source spot noise figure v gs = 0, v ds = 5.0v dc, f = 1.0khz b w = 16%, r g = 1.0 megohms e gen = 1.82mv dc, r l = 220 nf 3.0 db to-18 (to-206aa)
|
